Abstract
For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd/m 2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
