Abstract
Forward bias current-voltage (I-V) characteristics measured at room temperature were used to extract Schottky barrier heights in sulfur-implanted PtSi/n-Si and NiGe/n-Ge contacts. It is found that I-V data claimed to support barrier height reductions of ∼700 meV and ∼500 meV are more consistent with ∼300 meV and 100 meV reductions, respectively. These estimates should better guide attempts aiming at finding physical models for the observed reductions.
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