Year-end Sale % OFF 
Abstract
Embedding metal nanoparticles (NPs) into metal contacts at metal–Si (MS) interface is an alternative method for modification of Schottky barrier height (SBH) and compared with traditional methods that might result in an undesired alteration of the MS interface, offers a tremendous simplification and adaptation in processing steps. There is a direct link between the type, size and density of NPs and their interaction with contact/semiconductor and the improved electrical characteristics. A comprehensive analysis of the NPs effect at MS interface is required to make appropriate and efficient selection of contact/NPs combination as well as deposition of NPs and fabrication of nanostructured contact. In this work, multiple successive deposition of colloidal Au NPs by spin-coating is used as an alternative and simple method to deposit Au NPs on n- and p-Si substrates. Electrical parameters of Au NPs/Al nanostructured contacts including SBH and ideality factor are in turn extracted from current–voltage characteristics. Two models of inhomogeneity in SBH and enhanced tunneling at triple interface are then invoked for further analysis of the NPs effect on electrical properties of contacts. The best model proposed to describe this phenomenology is the enhanced tunneling at triple interface.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
