Schottky-barrier double-walled carbon-nanotube field-effect transistors

Abstract

We investigate electronic transport properties of Schottky-barrier field-effect transistors (FETs) based on double-walled carbon nanotubes (DWCNTs) with a semiconducting outer shell and a metallic inner one. This kind of DWCNT-FETs shows asymmetries of the $I\text{\ensuremath{-}}V$ characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon-nanotube FET.