Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

Abstract

In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type semiconductor. The devices were fabricated with four photolithography steps on glass substrates. The materials used for the fabrication were: 150 nm thick Indium tin oxide (ITO) as the cathode, a 45 nm thick IGZO layer deposited by sputtering, a 500 nm thick SU-8 layer as passivation layer, a 40 nm thick AgOx layer deposited by reactive sputtering and a 70 nm thick Au capping layer deposited by e-beam evaporation as the anode. The fabricated Schottky barrier diodes area was 80um x 160um. From the current-voltage characteristics, based on thermionic emission theory, the following electrical parameters were obtained: an ideality factor of 1.71 ± 0.14, a rectification ratio of 1.38 × 109, a Schottky barrier height of 1.14 ± 0.01 eV, and a saturation current density of 4.5 × 10−13 A/cm2.