Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes

Abstract

All sputtering-made Pt/n-GaN [metal–semiconductor (MS)] and Pt/SiO2/n-GaN [metal–oxide–semiconductor (MOS)] diodes were investigated before and after annealing at 500 °C. n-GaN, Pt, and SiO2 films were all fabricated by the cost-effective radio-frequency sputtering technique. A cermet target was used for depositing GaN. The Schottky barrier heights (SBHs) of both MS and MOS Schottky diodes have been investigated by the current–voltage (I–V) measurements. The results showed that SBHs increased after annealing at 500 °C for 20 min in N2 ambient, compared to the as-deposited at 400 °C. By using Cheung’s and Norde methods, the highest SBHs of MOS Schottky diodes were respectively found to be 0.79 and 0.91 eV for the as-deposited and had reached to 0.81 and 0.94 eV after annealing. The annealed Schottky diode had showed the higher SBH, lower leakage current, smaller ideality factor, and denser microstructure.