Abstract
In principal, the critical dimension (CD) of Nanoimprint lithography (NIL) pattern is determined by the CD of the template pattern. Unless one template is changed to another, NIL does not have a knob for direct control of the CD, such as the exposure dose and focus in optical lithography. Alternatively, the CD would be controlled by adjusting the thickness of the residual layer underneath the NIL pattern and controlling the etching process to transfer the pattern to a substrate. Controlling the residual layer thickness (RLT) can change the etching bias, resulting in the control of the CD of etched pattern. RLT is controllable by the resist dispense condition of the inkjet. For CD control, the metrology of RLT and feedback of the results to the dispense condition are extremely important. Scatterometry is the most promising metrology for the task because it is nondestructive 3D metrology with high throughput. In this paper, we discuss how to control CD in the NIL process and propose a process control flow based on scatterometry.
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