Abstract
AbstractTheoretical results are presented for the parameters of electron scattering on short‐range potential centres associated with ionized impurities in InSb. The calculations are based on the pseudopotential formalism. In order to perform that calculation, the pseudowave functions previously obtained are used. Values of the short‐range interaction parameters obtained for Te‐, Se‐, and S‐doped InSb are in good agreement with the empirical estimates.
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