Scattering of Charge Carriers in Thin Films PbTe:Bi

R.O Dzumedzey

doi:10.15330/pcss.20.2.171-174

Abstract

The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio msurf/mbulk is considered.

Highlights

The last two decades have demonstrated rapid growth in the interest of scientists in the practical realization of research results in thermoelectricity
The vapor phase technologies of formation of the structure of thin film micromodule for the temperature range (450-800) K are actively investigated on the basis of multicomponent thermoelectric materials of the type PbTe:Bi(Sb), PbTeBi2(Sb2)Te3, PbTe-SnTe, Pb-Ag-Sb-Te (LAST) or Pb-Sn-Ag-Te (LATT)
On the basis of thin films, it is possible to create thermoelectric micromodules that will be practical for miniature devices, where conventional thermoelectric modules cannot be fitted due to their dimensions [3, 10]

Summary

Introduction

The last two decades have demonstrated rapid growth in the interest of scientists in the practical realization of research results in thermoelectricity. First of all, this is the desire of humanity to receive safe and clean energy [1,2,3]. Thermoelectric energy conversion is relevant for several reasons: reliability and durability in work (due to the lack of moving mechanisms), environmental friendliness (no combustion of fuel for generating electricity and use of waste heat, which reduces the global contribution to the greenhouse effect). The use of thin-film structures leads to an improvement in the output of thermoelectric characteristics, and reduces the amount of material used [4,5]. On the basis of thin films, it is possible to create thermoelectric micromodules that will be practical for miniature devices, where conventional thermoelectric modules cannot be fitted due to their dimensions [3, 10]

Experiment

Elements of the theory of calculating carrier mobility

Analysis of results

Conclusions