Abstract
The mechanism of charge carrier scattering on ionized impurity atoms in an InAs/AlSb heterostructure with two filled size quantization subbands is studied. The purpose of the article is to develop a theory that fully describes quantum-mechanical processes in the structure under study. The calculation performed within the framework of the proposed transport time algorithm showed that the developed theory describes with high accuracy the mechanism of scattering of two-dimensional carriers by donor impurity ions in an active InAs layer. It was established that the lifetime limiting the mobility of two-dimensional carriers upon scattering by impurity ions is of the order of 10–12 s.
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