Abstract
The results of studies of structural and thermoelectric properties obtained by the powder pressing method of PbTe samples are presented. In order to interpret the obtained results, a theoretical calculation of the specific conductivity and the Seebeck coefficient was performed on the basis of a model that takes into account two types of free charge carriers. Conclusions have been made about the mechanisms of carrier scattering.
Highlights
Lead semiconductor material A4B6 is used to create thermoelectric modules operating in the 200 - 500 ̊C temperature range [1,2,3,4]
Techniques for studying structural thermoelectric properties are described in detail in [6]
The specific conductivity and Seebeck coefficient, in the samples obtained by hot pressing at a pressure of 0,5 GPa and T = 250 ̊C and cold pressing at a pressure of 2 GPa, are almost the same, which, with a lower coefficient of thermal conductivity of cold-pressed samples, determines the prospectivity of obtaining materials with high quality
Summary
Lead semiconductor material A4B6 is used to create thermoelectric modules operating in the 200 - 500 ̊C temperature range [1,2,3,4]. Modification of the properties of PbTe to improve its thermoelectric parameters remains urgent task. PbTe obtained by pressing the powder is used to create thermocouples. Given the correct choice of technological parameters of obtaining such a material has several advantages over single crystalline, in particular, improved mechanical properties. The pressing process itself, the influence of its individual stages on the properties of the material are poorly understood. Such information can be used to optimize the technological factors of obtaining a material and to increase its thermoelectric figure of merit
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