Abstract
In this article, the author discuss the experiments performed on atomically-clean graphene on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in ultra-high vacuum to determine the charge carrier scattering rates from charged impurities, lattice defects, and phonons (graphene acoustic phonons and substrate polar optical phonons), as well as their dependence on dielectric environment. Addition of potassium to graphene as a model charged impurity is used to study the dependence of the mobility and minimum conductivity point on charged impurity density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
