Scattering in a nano-scale MOSFET: a quantum transport analysis

Abstract

As MOSFET channel lengths approach the nanoscale, the reliability of semi-classical transport models decreases. To offer additional insight into transport phenomena in these deeply scaled devices, simulation tools that treat quantum transport without sacrificing the realistic treatment of scattering are needed. A unique non-equilibrium Green's function approach Schrodinger Equation Monte Carlo (SEMC) has been developed that provides a physically rigorous approach to quantum transport and phase-breaking inelastic scattering via real (actual) scattering processes such as optical and acoustic phonon scattering. Quasi-one-dimensional SEMC codes previously have been applied to study essential quantum transport physics in devices such as quantum well lasers where the potential varies only along the nominal direction of transport, although with a fully three-dimensional (3D) treatment of scattering. However, such 1D analysis cannot provide quantitatively accurate results for 2D MOSFET structures, and, in particular, lacks the capability of self-consistency with respect to the potential profile. In this paper, the development of a SEMC-2D code for electrostatically self-consistent treatment of quantum transport within devices with, additionally, quantum confinement normal to the direction of transport, is reported along with illustrative simulation results for nano-scaled SOI MOSFETs geometries.