Abstract
A theoretical analysis of the resonant tunneling contribution and of the effect of scattering centers on current for structures like Schottky Barriers (SB), Metal-Oxide-Semiconductor junctions (MOS), and Double Barrier Heterostructures (DBH) is presented in terms of the transfer matrix and Airy functions uni-dimensional approaches. The scattering is simulated to arise from localized states, with δ-type potential, within the well or the barrier. We show how the scattering affects the phase coherence of the carrier wave inside the quantum well, and the electron tunneling mechanism through the barrier. In particular we evidence the opposite effects of elastic scattering centers: a decrease of the peak-to-valley ratio in the I-V characteristics of DBH if the centers are randomly distributed in spatial position, or a increase whenever a particular distribution inside the well or the barrier is present.KeywordsSchottky BarrierTransmission ProbabilityResonant TunnelingBand TailSi02 InterfaceThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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