Scattering and noise parameters of four recent microwave bipolar transistors up to 12 GHz

K Hartmann,M.J.O Strutt

doi:10.1109/proc.1973.8988

Scattering and noise parameters of four recent microwave bipolar transistors up to 12 GHz

K Hartmann, M.J.O Strutt

https://doi.org/10.1109/proc.1973.8988

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Journal: Proceedings of the IEEE	Publication Date: Jan 1, 1973
Citations: 4

Affiliation: École Polytechnique Fédérale de Lausanne

#Max Values #Fundamental Parameters + Show 4 more

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Abstract

The scattering and the four fundamental noise parameters of four recent bipolar transistors with the largest f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> values are determined and compared for the emitter configuration. Furthermore, the construction of a variable short for the suppression of image frequencies is given.

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