Abstract
We carried out the temperature (22–350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic chemical-vapor deposition. Hall data is analyzed with a simple parallel conduction extraction method and temperature dependent mobility and carrier densities of the bulk and two-dimensional (2D) electrons are extracted successfully. The results for the bulk carriers are discussed using a theoretical model that includes the most important scattering mechanisms that contribute to the mobility. In order to investigate the mobility of two-dimensional electron gas, we used a theoretical model that takes into account the polar optical phonon scattering, acoustic phonon scattering, background impurity scattering, and interface roughness scattering in 2D. In these calculations, the values are used for the deformation potential and ionized impurity density values were obtained from the bulk scattering analysis. Therefore, the number of fitting parameters was reduced from four to two.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
