Abstract
AbstractDiamond indentations have been carried out on Zn‐diffused GaAs p+n junctions on (100) oriented material. Electron‐beam induced current (EBIC) investigations revealed the well‐known dislocation slip bands in 〈110〉 directions. Scanning deep level transient spectroscopy (SDLTS) imaging proved a deformation‐induced point‐defect level at Ey + 0.5 eV, which is preferentially concentrated in the dislocation‐free regions between the slip bands rather than within the slip bands. Monochromatic cathodolumines‐cence (CL) imaging at 10K using different wavelengths revealed only the dislocation‐induced recombination activity but not any point‐defect luminescence corresponding to the 0.5 eV level found by SDLTS.
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