Abstract
The results of investigations of solar grade mc-Si by means of combination of scanning X-ray beam excited optical luminescence microscopy (SXEOL), X-ray beam induced current (XBIC) and X-ray fluorescence (XRF) are presented. It was found, that for relatively clean sample SXEOL and XBIC provide similar information about the recombination activity of defects while for the samples with a high transition metal content there are significant differences in the provided information. The reasons of the revealed XBIC - SXEOL differences are discussed.
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