Abstract
Scanning tunnelling microscopy in UHV has been used to study hexagonal (6H) silicon carbide grown by the original Lely method. The (0001̄)C face of as-grown samples revealed extended, up to 1500 Å high, terraces with straight edges. Some terrace risers were smooth, others had a fine structure consisting of a number of smaller terraces. Step bunching is proposed to be responsible for such a morphology. Atomic resolution on as-grown surfaces was not attained. Flashing a sample to a temperature of 1500–1600°C produced a number of new morphological features. Among them are irregular, atomically flat terraces, many of them exhibiting 6 × 6 reconstruction, triangularly or hexagonally shaped islands and holes up to ∼ 40 Å high/deep and dendritic depressions at the bottom of some hexagonal holes. These features are believed to be the result of sublimation.
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