Abstract
AbstractExperimental results are reported that improve our understanding of processes that initiate surface roughness from a single ion bombardment event.The results are from a scanning tunnelling microscopy (STM) study of the ion bombardment of silicon at implantation energies. Also reported is an atom by atom analysis of a single sputtering event—8 keV krypton on a cleaved crystal of PbS. In both cases a very low ion dose was used to minimize the overlap of cascades. Recent results on the bombardment of gold and graphite will also be reviewed. The results show that every impact leaves its mark on the surface, indicating that surface roughening processes can be uncleated at the atomic level.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
