Abstract
Abstract We report on the measurement of the electronic properties of (112) AgInSe 2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current–voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe 2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.
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