Abstract
Co grows on W(110) in close-packed layers with hcp and fcc stacking. During further growth, the corresponding stacking faults result in dislocations at the boundaries of coalescing islands. Using scanning tunneling spectroscopy, we could distinguish between different types of dislocations, which in turn are related to dislocation types modeled with hard spheres. In contrast to the hard sphere model, the dislocations in the Co film extend over several unit cells. Therefore, the average atomic density becomes the main distinguishing parameter. The change of the electronic structure in the dislocation with respect to homogeneous films is characterized by a shift of electronic states towards higher binding energy.
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