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Abstract
The phase transformation of a (001)-oriented θMnN thin film grown by molecular beam epitaxy to ηMn3N2 has been investigated using a combination of diffraction analysis and real-space surface analysis by scanning tunneling microscopy. The θMnN thin film is prepared by growth at 450 °C; it is then annealed at 550 °C. It is found that the phase transformation results in three different orientations of the ηMn3N2 phase within the annealed film. The phase transformation is attributed to diffusion and loss of N atoms and ordering of the N-vacancies into parallel sheets. A schematic model of the annealed film structure is presented.
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