Abstract
Heteroepitaxial growth of compound semiconductors on Si surfaces is strongly affected by the bonding of the first atomic layer to the substrate. These effects, which include passivation, etching, reaction and compound formation, can be understood by examining the atomic structure of the surface as the first atomic layers of the overlayer are formed. In this paper we examine the information obtained from scanning tunneling microscopy for passivation of semiconductor surfaces. We will discuss in detail the case of group V and VI overlayers on Si surfaces and also address the passivating effect of group VI atoms on the surface of III-V compounds.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
