Abstract
This study employs real-time high-temperature scanning tunneling microscopy to examine the evolution of the surface atomic structure of Si(100) during homoepitaxy by chemical vapor deposition at 625°C. At the initial stage, a (2× n) structure is gradually formed, and the growth mode is pure step flow, followed by double step flow after a single-domain surface is obtained due to faster step advance of S B than S A. As growth proceeds, areas with c(4×4) symmetry appear, grow, and eventually cover the entire surface.
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