Abstract
Scanning tunneling microscopy and spectroscopy (STM-STS) has been used to study doping induced changes in the local electronic structure of CuO 2 planes at the surface of thin epitaxial films of the infinite layer compound Sr 1− x A x CuO 2, chemically modified via substitutions A (Ca, La) on the Sr site. It is observed that doping produces states within the insulating parent band gap, reflecting contributions from dopants (La) as well as composition dependent defects (Sr vacancies).
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