Abstract
AbstractChemically sensitive scanning transmission electron microscopy in combination with electron energy loss spectroscopy is applied to investigate self organized quantum structures. The impact of vertical stacking on size and chemical composition of both quantum dots and quantum dashes is studied. In case of our InAs quantum dashes grown on an InP substrate, a strong increase of the structure size with layer number is found while the chemical composition of the quantum dashes remains constant. In contrast, we do not observe any significant change in both composition and size in case of vertically stacked InGaAs quantum dots grown on a GaAs substrate. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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