Abstract
Elemental distributions and chemical bonding states of oxygen‐ion‐implanted SiC have been examined using scanning transmission electron microscopy (STEM) equipped with an energy dispersive X‐ray spectrometer (EDX) and an electron energy loss spectrometer (EELS). 6H‐SiC single crystals with [0001] orientation were implanted with 180 keV oxygen ions at 650°C to fluences of and . STEM‐EDX/EELS measurements show that the low‐dose sample possesses a buried amorphous layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well‐defined layer including self‐bonded carbon atoms is formed in the high‐dose sample, and this amorphous region has a layered structure due to compositional variations of silicon, carbon, and oxygen. A slight chemical disordering induced by implantation is also confirmed to exist in topmost SiC layer. © 2000 The Electrochemical Society. All rights reserved.
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