Abstract
Scanning thermal microscopy (SThM) with a thermal resolution of 100 nm can realize the thermal mapping of low-dimensional nanomaterials. We develop an improved quantitative SThM method for the thermal conductivity of a single SiO2 nanoparticle. The calibration of SThM is based on the output voltage as a function of the thermal conductivity of bulk samples. It is found that the thermal conductivity of a single SiO2 nanoparticle is 0.95 ± 0.08 W/mK at 300 K, which is lower than that of SiO2 bulk material. The effect of the contact thermal resistance between the probe and the nanoparticle on the measurement is clarified.
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