Abstract
AbstractThis work describes a scanning probe parallel nanolithography (SPNL) technique for high throughput in nanometric patterning on single‐crystal silicon (SCS) substrates. Two types of multiprobe cantilever arrays used for SPNL were fabricated by conventional micromachining. All the probes mounted on the free end of each cantilever were made of quasitrihedral pyramidal shape composed of (311) and (411) planes using the originally designed mask. Negative and positive types of nanolithography were performed on the basis of field‐enhanced anodization and self‐assembled monolayer mask techniques, respectively, and they succeeded in drawing a number of nanometric patterns of silicon dioxide (SiO2) on SCS substrates. After anisotropic wet etching of the SCS substrates using the SiO2 films as the mask material, we were also able to fabricate nanowires and nanogrooves. The effects of the applied voltage and scan time of cantilever arrays on wire and groove dimensions were systematically examined by atomic force microscopy (AFM) observations. An optimum condition for the parallel SPNL is proposed on the basis of this research. © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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