Abstract
Scanning probe microscopy (SPM) is still a relatively new tool in semiconductor failure analysis (FA). But within the last few years it has developed into an essential imaging method for process control and failure analysis due to its unique features and high adaptability. Atomic force microscopy is indispensable whenever three-dimensional and quantitative surface information combined with unsurpassed resolution is needed. New electrical SPM techniques offer previously inaccessible insights into the nanoscopic construction of semiconductors. They provide for the first time two-dimensional maps of various physical parameters like oxide thickness, doping, temperature or current at sub-micron to nanometer resolution. By this SPM greatly enhances the possibilities of FA to find faults and control processes.
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