Abstract
The scanning photoluminescence technique at room temperature was applied to characterize the quality of ion-implanted indium phosphide as well as to investigate the defect recovery as a function of the annealing temperature. Doses ranging from 1010 to 1014 ions cm-2 were implanted with either neon or magnesium ions. The intensity of the photoluminescence response was found to be related to the ion dose. Two different substrates were used: an iron-doped semi-insulating one and an undoped one. The results were similar. Nevertheless, the sensitivity was higher for the undoped substrate. After thermal anneals ranging from 200 up to 800 degrees C the average PL intensity was again recorded and was found to increase with the progressive recovery of the defects. After an anneal at 750 degrees C the PL response was comparable to the signal obtained in the case of an annealed reference. The contribution of a doping impurity in a semi-insulating substrate was not clearly evidenced, the PL signal being dominated by the remaining non-radiative centres.
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