Abstract
We investigated the doping concentration (ND) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with ND raging from 3×1016 cm−3 to 5×1017 cm−3. By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin accumulation near the channel edges in all the samples with different ND. Moreover, the position and in-plane magnetic field dependence of the Kerr rotation signal are found to vary with ND. We analyzed the ND dependence of the spin Hall conductivity by taking account of the ND-dependent spin lifetime based on the typical drift-diffusion model.
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