Abstract
Abstract The properties and performance of electronic devices are crucially dependent on interface-related phenomena. The presence of interfaces can enable electronic device functionality (p-n diodes, solar cells); alternatively, non-functional interfaces can degrade device performance (ohmic vs. non-ohmic contacts). The most versatile tools for semiconductor interface characterization are ac (impedance spectroscopy, C-V) and dc (I-V) transport measurements. However, due to the lack of spatial resolution, these methods often cannot separate the contributions from electroactive interfaces and contacts. This is especially true for the non-traditional electronic materials such as semiconductive oxides, nitrides, conductive polymers, etc. Combined with the tendency towards miniaturization of electronic devices, this clearly necessitates spatially resolved ac and dc transport measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
