Abstract
In recent years, there has been interest in devices created on InGaAs due to the possibility of its use for spintronics. Nonetheless, this material is known for usually presenting some levels of disorder. We have used scanning gate microscopy to study the local potential for an in-plane gated InGaAs quantum point contact and succeeded in obtaining images corresponding to sites where same quantum interference conditions are maintained. Furthermore, we have visualized images of the local potential variations within the confined region near pinch-off condition.
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