Abstract
The Scanning Electron Microscope (SEM), a powerful and versatile analytical tool, has proven to be indispensable for characterizing semiconductor devices and materials. This paper focuses attention on the working principle of the SEM and the signals available for analysis. Techniques for applying these signals for characterization of semiconductor devices and materials are grouped into three categories: imaging, x-ray microanalysis, and electrical. Imaging techniques vary from standard quality control inspection to in-depth cross-sectional analysis which is required for technlogy development. The advantages of having energy dispersive (EDS) and wavelength dispersive (WDS) x-ray spectrometers for x-ray microanalysis are also discussed. Voltage contrast and Electron Beam Induced Current (EBIC), two electrical techniques usually used for circuit analysis, have been proven useful for semiconductor materials characterization. The SEM has been integrated into semiconductor technology development and will continue to evolve to meet the challenges of Very Large Scale Integration (VLSI) processing. The scanning electron
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