Abstract
The National Institute of Standards and Technology (NIST) is in the process of developing a new scanning electron microscope (SEM) magnification calibration reference standard useful at both high and low accelerating voltages. This standard will be useful for all applications to which the SEM is currently being used, but it has been specifically tailored to meet many of the particular needs of the semiconductor industry. A small number of test samples with the pattern were prepared on silicon substrates using electron beam lithography at the National Nanofabrication Facility at Cornell University. The structures were patterned in titanium/palladium with maximum nominal pitch of approximately 3000μm scaling down to structures with minimum nominal pitch of 0.4μm. Several of these samples were sent out to a number of university, research, semiconductor and other industrial laboratories in an inter-laboratory study. The purpose of the study was to test the SEM instrumentation and to review the suitability of the sample design.
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More From: Proceedings, annual meeting, Electron Microscopy Society of America
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