Abstract
Scanning capacitance microscopy (SCM) and -spectroscopy (SCS) were applied to study the charge trapping and the charge retention in silicondioxide layers with embedded Ge- or Si-nanoclusters. The nanoclusters were formed by ion beam synthesis. Applying a dc bias to the conductive nano-tip charge injection into the dielectric was achieved. While SCM images visualize the localized trapped charge in the oxide, the locally recorded d C/d V versus V curves allow to quantify the trap density. The evaluation of d C/d V shifts was used to compare the electronic properties of different oxide layers in dependence on the implantation parameters. In addition it is demonstrated, that combined SCM/SCS measurements are a suitable tool for the examination of the charge decay as well as of the reliability and degradation of oxide layers on a nanoscale.
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