Abstract
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) have been used to image YBa/sub 2/Cu/sub 3/O/sub x/ (YBCO) films grown on yttria stabilized zirconia (YSZ) buffer layers on Si substrates. The effects of deposition and patterning conditions on device topography and performance are being investigated. Evidence is found for pinhole formation in YSZ buffer layers and microcracking in the YBCO films. AFM images of 0.25- mu m-wide YBCO lines on Si made using electron-beam lithography and ion milling are presented. >
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