Abstract
A drift-diffusion model was used to investigate the scaling behaviour of the terminal characteristics of metal - semiconductor - metal (MSM) photodiodes. A one-dimensional model with both constant and field-dependent carrier mobilities was used to study the steady-state response to optical illumination. The scaling behaviour with respect to changes in illumination intensity, nominal electric field, contact separation and recombination lifetime was investigated. It is shown that the scaling behaviour derived from a simple analytical photodetector model is inappropriate even under conditions where it is expected to be valid. The scaling behaviour that is derived may be used in the design of efficient MSM photodiodes and is an essential prerequisite to understanding their transient behaviour.
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