Abstract
Deep-submicron In0.7Ga0.3As buried-channel MOSFETs with various gate lengths down to 40 nm are demonstrated. In0.7Ga0.3As buried-channel MOSFETs were fabricated on an epitaxial wafer using an InP/In0.52Al0.48As double barrier. The device characteristics were analysed, including subthreshold swing, transconductance and drive current. Good scaling behaviour was observed for these III–V MOSFETs. For a 40 nm gate length device, the VT roll-off is around 100 mV, the subthreshold swing is 132 mV/dec and DIBL is 214 mV/V.
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