Scaling properties of ballistic nano-transistors

Ulrich Wulf,Hans Richter,Marcus Krahlisch

doi:10.1186/1556-276x-6-365

Ulrich Wulf, Hans Richter + Show 1 more

Open Access

https://doi.org/10.1186/1556-276x-6-365

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Abstract

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

Highlights

In the past years, channel lengths of field-effect transistors in integrated circuits were reduced to arrive at currently about 40 nm [1]
The source-drain tunneling and the classically allowed transport regime are separated by a close-to linear threshold trace (LTT)
The gate voltage associated with the LTT is denoted with vGth

Summary

Introduction

Channel lengths of field-effect transistors in integrated circuits were reduced to arrive at currently about 40 nm [1]. As well-known with decreasing channel length the desired long-channel behavior of a transistor is degraded by short-channel effects [10-12]. One major source of these short-channel effects is the multi-dimensional nature of the electro-static field which causes a reduction of the gate voltage control over the electron channel. The most obvious quantum short-channel effect is the formation of a source-drain tunneling regime below threshold gate voltage. The source-drain tunneling and the classically allowed transport regime are separated by a close-to linear threshold trace (LTT). Such a behavior is found in numerous MOSFETs with channel lengths in the range of a few tens of nanometers (see, for example, [2-9])

Results

Discussion

Conclusion