Scaling projections for Sb-based p-channel FETs

Abstract

Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels. To be as realistic as possible, the basic parameters are chosen to be those measured experimentally in state-of-the-art high-mobility materials, and where possible, predictions are compared against published data. Confinement effects are captured in the simulations using the density-gradient description of quantum transport. The emphasis is on projecting scaling properties and ultimate performance, with key issues being short-channel effects, the importance of source-drain leakage current, power considerations and p +-cap design. Although important, issues related to gate leakage current and gate stack design are not well addressed by modeling, and so are not considered in detail. With III–V complementary circuits and high-speed, low-power applications in mind, the general conclusion is that among the antimonide-based pFETs, InGaSb devices provide the best balance of speed and power dissipation.