Scaling possibility of pzt capacitors for high density and low-voltage nvfram application

Abstract

Scaling limit of the PZT capacitors for high-density and low-voltage Nonvolatile Ferroelectric RAM (NVFRAM) is described using the memory operation scheme for data read-out. The analysis is performed using the measured switching polarization characteristics of our 3 × 3μm2 PZT capacitors applicable to 1 Mbit NVFRAM. 16Mbit NVFRAM can be realized with simple shrinkage of our planar-type PZT capacitor without having to fabricate a stacked or trench capacitor.