Scaling of the paramagnetic anomalous Hall effect in SrRuO3

Abstract

We extract the paramagnetic anomalous Hall effect (AHE) resistivity ${\ensuremath{\rho}}_{xy}^{\mathrm{AHE}}$ in thin films of the itinerant ferromagnet SrRuO${}_{3}$ and show that the AHE coefficient ${R}_{s}$ scales with the longitudinal resistivity ${\ensuremath{\rho}}_{xx}$. We fit the resistivity dependence of ${\ensuremath{\rho}}_{xy}^{\mathrm{AHE}}$ assuming two mechanisms: side jumps and Karplus-Luttinger (Berry phase) mechanism. For the latter, we consider the effect of a finite scattering time with a fractional power-law relation to ${\ensuremath{\rho}}_{xx}$.