Scaling of a metal/insulator transition in a 2D system at B = 0

Abstract

The resistivity of a two-dimensional electron system in silicon at low electron densities was empirically found to scale with a single parameter, T 0, which approaches zero at some critical electron density, n c, and increases as a power T 0 ∞ ∣ n s − n c∣ v with v = 1.6 ± 0.1 both in metallic ( n s > n c) and insulating ( n s < n c) regions. This behavior suggests a true metal/insulator transition in the two-dimensional electron system in silicon at B = 0, in contrast with the well-known scaling theory.