Abstract
Numerical simulation of the gallium arsenide permeable base transistor has been performed through solutions to the drift and diffusion equations in two dimensions. First, scaling of the device to increase the current and frequency has been investigated. The various scaling approaches used are discussed in detail. Second, the sensitivity of the device performance to the device parameters such as base penetration, channel opening, etc., has been studied. Third, the effect of material characteristics on the cutoff frequency has been investigated. A new design incorporating a semi-insulating region around the base is proposed and studied in detail. This new design is shown to reduce the amount of unwanted stored charge upstream of the base and to result in increased cutoff frequencies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
