Abstract
Numerical simulation of the gallium arsenide permeable base transistor has been performed through solutions to the drift and diffusion equations in two dimensions. First, scaling of the device to increase the current and frequency has been investigated. The various scaling approaches used are discussed in detail. Second, the sensitivity of the device performance to the device parameters such as base penetration, channel opening, etc., has been studied. Third, the effect of material characteristics on the cutoff frequency has been investigated. A new design incorporating a semi-insulating region around the base is proposed and studied in detail. This new design is shown to reduce the amount of unwanted stored charge upstream of the base and to result in increased cutoff frequencies.
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