Abstract
The longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are investigated in the integer quantum Hall effect regime in n-InGaAs/GaAs double quantum well nanostructures in the magnetic fields B up to 16 T at temperatures T = (0.05-4.2) K before and after IR illumination. The analysis of the quantum Hall effect plateau-plateau transitions based on the scaling hypothesis with regard to electron-electron interaction was carried out.
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