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Abstract
The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.
Highlights
The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films
We report that the adsorption-controlled growth of SrTiO3 films by hybrid molecular beam epitaxy (MBE) is scaled to growth rates in excess of 600 nm h−1 with no degradation in structural film quality, rivaling the MBE growth rates commonly employed in industry for the growth of semiconductor thin films
The conditions to access the self-regulated growth of stoichiometric SrTiO3 were determined for a range of growth rates by observing specific surface reconstructions in real time using in situ RHEED34,35
Summary
The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. When no native single crystalline substrate that satisfies these requirements is available, virtual substrates, i.e., the growth of buffer layers allowing a change in lattice parameter, structure or even chemistry of the available substrate, can provide a solution In such cases robust and cost effective, while scalable, material integration schemes that suffice stringent economic requirements are in demand to realize new device generations with improved performance at lower cost, weight, and size. Such metamorphic epitaxial materials represent a route to expand the application space of existing devices, and to realize completely new technologies by stabilizing material phases with otherwise unattainable properties. Epitaxial integration of SrTiO3 on Si has been successfully demonstrated[15] and has been scaled up to 200 mm Si wafers using an industry-scale molecular beam epitaxy (MBE) system[16], typical film growth rates of about 50 nm h−1 or lower[16,17,18,19] impede high-throughput required for profitability
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