Scaling effect on the operation stability of short-channel organic single-crystal transistors

Abstract

Organic single-crystal transistors allowed the authors to investigate the essential features of short-channel devices. Rubrene single-crystal transistors with channel lengths of 500 and 100nm exhibited good field-effect characteristics under extremely low operation voltages, although space charge limited current degrades the subthreshold properties of 100nm devices. Furthermore, bias-stress measurements revealed the remarkable stability of organic single-crystal transistors regardless of device size. The bias-stress effect was explained by the trapping of gate-induced charges into localized density of states in the single-crystal channel.